Adding hydrogen triples transistor performance in graphene
Saturday, September 3, 2011 - 14:30
in Physics & Chemistry
A technique that uses hydrogen to improve transistor performance on real-world graphene devices has been demonstrated on the wafer-scale. Researchers have demonstrated a 3x improvement in electron mobility of epitaxial graphene grown on the silicon face of a 100 mm silicon carbide wafer, as well as a similar improvement in radio-frequency transistor performance.