Hydrogenation technique triples transistor performance in epitaxial graphene

(PhysOrg.com) -- A technique that uses hydrogen to improve transistor performance on real-world graphene devices has been demonstrated on the wafer-scale by researchers in Penn State’s Electro-Optics Center (EOC). In a paper published in the August 1, 2011, online edition of Nano Letters, the researchers demonstrated a 3x improvement in electron mobility of epitaxial graphene grown on the silicon face of a 100 mm silicon carbide wafer, as well as a similar improvement in radio-frequency transistor performance.

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