Team reports scalable fabrication of self-aligned graphene transistors, circuits

Researchers previously reported a self-aligned technique for making graphene transistors with unparalleled speed, but scalability was a question. The team now uses a dielectrophoresis assembly approach to precisely place nanowire gate arrays on large area chemical vapor deposition growth graphene to enable the rational fabrication of high speed transistor arrays. They also did this on a glass substrate, minimizing the parasitic delay and enabling graphene transistors with extrinsic cut-off frequencies exceeding 50 GHz.

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