Imec demonstrates CMOS integrated poly-SiGe piezoresistive pressure sensor
Tuesday, October 11, 2011 - 08:30
in Physics & Chemistry
Imec realized an integrated poly-SiGe-based piezoresistive pressure sensor directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first integrated poly-SiGe pressure sensor directly fabricated above its readout circuit, but also the first time that a poly-SiGe MEMS device is processed on top of Cu-backend CMOS.