Building Blocks for GaN Power Switches
Tuesday, December 15, 2015 - 12:41
in Physics & Chemistry
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with applications spanning nearly all electronics products and electricity distribution infrastructures. They describe their results in a paper in this week's Applied Physics Letters.