2D transistors promise a faster electronics future

Faster electronic device architectures are in the offing with the unveiling of the world's first fully two-dimensional field-effect transistor (FET) by researchers with the Lawrence Berkeley National Laboratory (Berkeley Lab). Unlike conventional FETs made from silicon, these 2D FETs suffer no performance drop-off under high voltages and provide high electron mobility, even when scaled to a monolayer in thickness.

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