Promising doped zirconia
Friday, May 17, 2013 - 10:30
in Physics & Chemistry
Materials belonging to the family of dilute magnetic oxides (DMOs)—an oxide-based variant of the dilute magnetic semiconductors—are good candidates for spintronics applications. This is the object of study for Davide Sangalli of the Microelectronics and Microsystems Institute (IMM) at the National Research Council (CNR), in Agrate Brianza, Italy, and colleagues. They recently explored the effect of iron (Fe) doping on thin films of a material called zirconia (ZrO2 oxide). For the first time, the authors bridged the gap between the theoretical predictions and the experimental measurements of this material, in a paper about to be published in EPJ B.