Nano 'pin art': NIST arrays are step toward mass production of nanowires
Friday, July 30, 2010 - 14:49
in Physics & Chemistry
NIST researchers grow nanowires made of semiconductors -- gallium nitride alloys -- by depositing atoms layer-by-layer on a silicon crystal under high vacuum. NIST has the unusual capability to produce these nanowires without using metal catalysts, thereby enhancing luminescence and reducing defects. NIST nanowires also have excellent mechanical quality factors.
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