... PhysOrg.com) -- Fujitsu Laboratories announced today the development of a high-performance power amplifier based on gallium nitride (GaN) high electron mobility transistors (HEMT), ...
Panasonic today announced the development of a Gallium Nitride (GaN) -based diode with a new junction structure called "Natural Super Junction". The new GaN diode with ...
Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, ...
Fujitsu announced today the development of the world's first gallium-nitride HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter ...
... get more sophisticated and require higher performing transistors, engineers have been seeking an alternative like gallium nitride-based transistors that can perform better than silicon and in extreme ...
... goods like DVD players are currently based on inorganic semiconductor materials such as gallium arsenide, gallium nitride and related alloys. The term 'semiconductor' describes the material's ability ...
... zinc oxide could one day replace today's state-of-the-art gallium nitride-based devices. Key to the discovery is production of positively charged carriers -- p-type doping -- in ...
... region, but have no response to visible light.
"We built our photodiodes with gallium nitride, which is a semiconductor that can be used to create photodiodes that require no filters because this ...
... ," he said. "The major obstacle was coming up with a substrate based on silicon that also has a reflective surface underneath the epitaxial gallium nitride layer, and we have now solved this problem."
Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in ...
... continue the tradition of Moore's law.
"Nanowires of silicon and things like gallium arsenide, gallium nitride or indium arsenide, or other types of exotic semiconductors, are being investigated as ...
... of nanotube-based transistors to the transparent plastic but also additionally connected them to commercial gallium nitride (GaN) light-emitting diodes, which change their luminosity by a factor of 1 ...
... would be both a less-toxic and cheaper light source than the combinations used in today's commercial LEDs -- gallium nitride and cerium-doped yttrium oxide, they said. Cerium-doped yttrium oxide is ...
... design. They replaced the conventional Gallium Indium Nitride/Gallium Nitride (GaInN/GaN) layer of ... LED active region, and replaced it with Gallium Indium Nitride/ Gallium Indium Nitride (GaInN/GaInN). ...
... , claims a leading UK materials scientist. The source of the huge potential he foresees, gallium nitride (GaN), is already used for some lighting applications such as camera flashes, bicycle lights, ...
