... PhysOrg.com) -- Fujitsu Laboratories announced today the development of a high-performance power amplifier based on gallium nitride (GaN) high electron mobility transistors (HEMT), ...
... get more sophisticated and require higher performing transistors, engineers have been seeking an alternative like gallium nitride-based transistors that can perform better than silicon and in extreme ...
... goods like DVD players are currently based on inorganic semiconductor materials such as gallium arsenide, gallium nitride and related alloys. The term 'semiconductor' describes the material's ability ...
... zinc oxide could one day replace today's state-of-the-art gallium nitride-based devices. Key to the discovery is production of positively charged carriers -- p-type doping -- in ...
... region, but have no response to visible light.
"We built our photodiodes with gallium nitride, which is a semiconductor that can be used to create photodiodes that require no filters because this ...
... ," he said. "The major obstacle was coming up with a substrate based on silicon that also has a reflective surface underneath the epitaxial gallium nitride layer, and we have now solved this problem."
Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in ...
... continue the tradition of Moore's law.
"Nanowires of silicon and things like gallium arsenide, gallium nitride or indium arsenide, or other types of exotic semiconductors, are being investigated as ...