Fujitsu Develops Gallium-Nitride HEMT Amplifier Featuring World's Highest Output in the C-Ku Band
Friday, May 28, 2010 - 11:36
in Physics & Chemistry
Fujitsu today announced the development of an amplifier based on gallium-nitride (GaN) high electron mobility transistor (HEMT) technology, which features an output of 12.9W - more than twice the output of previous amplifiers and presently featuring the world's highest amplification output - when operating in the wide band range of the C-band, X-band, and Ku-band radio frequency spectrums between 6GHz-18GHz.