Fujitsu Develops Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset
Wednesday, September 30, 2009 - 18:56
in Physics & Chemistry
Fujitsu announced today the development of the world's first gallium-nitride HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the range of 70 to 100 GHz, for which widespread usage is expected to grow. The new transceiver amplifier chipset features a GaN HEMT-based high-output transmitter amplifier and high-sensitivity receiver amplifier.
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