Panasonic Develops A Gallium Nitride (GaN) Power Device with A New Junction Structure
Wednesday, December 17, 2008 - 14:14
in Physics & Chemistry
Panasonic today announced the development of a Gallium Nitride (GaN) -based diode with a new junction structure called "Natural Super Junction". The new GaN diode with low operating loss is applicable to a variety of consumer and industrial power switching systems.
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