Fujitsu Develops C- to X- Ultra-Wideband Gallium-Nitride HEMT Power Amplifier Featuring High Output and Efficiency
Tuesday, November 4, 2008 - 15:07
in Physics & Chemistry
(PhysOrg.com) -- Fujitsu Laboratories announced today the development of a high-performance power amplifier based on gallium nitride (GaN) high electron mobility transistors (HEMT), which as a hybrid amplifier - an amplifier in which the transistor and capacitor are each mounted on separate semiconductor package substrates - features the world's highest output performance in terms of power and efficiency in the C-band to X-band radio frequency bandwidths above 5GHz.