New technique boosts high-power potential for gallium nitride electronics

Wednesday, February 2, 2011 - 12:33 in Physics & Chemistry

Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies -- but these GaN devices traditionally break down when exposed to high voltages. Now researchers have solved the problem, introducing a buffer that allows the GaN devices to handle 10 times greater power.

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