Team obtained high-level control of spin qubit lifetime based on silicon quantum dots
Monday, July 6, 2020 - 14:11
in Physics & Chemistry
By tuning the direction of the external magnetic field with respect to the crystallographic axis of the silicon wafer, an improvement of spin lifetime (relaxation time) by over two orders of magnitude was reported in silicon quantum dots. This breakthrough was carried out by a team led by academician Guo Guangcan from CAS Key Laboratory of Quantum Information, USTC, in which Prof. Guo Guoping, Prof. Li Hai-Ou with their colleagues and Origin Quantum Computing Company Limited. This work was published in Physical Review Letters on June 23, 2020.