Study unveils dependence of spin memory loss in a variety of interfaces
Tuesday, March 24, 2020 - 08:40
in Physics & Chemistry
Researchers at the University of Twente and Beijing Normal University have recently conducted a study investigating the parameter known as spin memory loss (SML) for a variety of different interfaces, using a combination of theoretical and computational methods. Their paper, published in Physical Review Letters, offers valuable new insights that could inform the design of more efficient interfaces.