Innovative technology to recover performance of CMOS devices damaged by hot carrier injection
Tuesday, May 26, 2015 - 07:30
in Physics & Chemistry
Tokyo Tech researchers demonstrate for the first time that application of pulsed reverse-voltages produce recovery of the performance of CMOS transistors damaged by the generation of electron-traps in the gate oxide due to hot carrier injection (HCI) of highly energetic electronics from the source-drain region.