Large area industrial crystalline silicon n-PERT solar cell with 22 percent efficiency
Wednesday, January 14, 2015 - 07:00
in Physics & Chemistry
Nano-electronics research center imec announced today that it has improved its large area n-type PERT (passivated emitter, rear totally diffused) crystalline silicon (Si) solar cell on 6" commercially available n-type Cz-Si wafers, now reaching a top conversion efficiency of 22.02 percent (calibrated at ISE CalLab). This is the highest efficiency achieved for this type of 2-side-contacted solar cell on an industrial large area wafer size.