Renesas announces SRAM using leading-edge 16 nm FinFET for automotive information systems
Friday, December 19, 2014 - 08:30
in Physics & Chemistry
Renesas Electronics today announced the development of a new circuit technology for automotive information SoCs (system on chips) at 16 nanometer (nm) and beyond. Using this new circuit technology, Renesas tested the prototype of an SRAM, at the 16 nm node as the cache memory for CPU and real-time image processing blocks in an SoC, and successfully confirmed that this SRAM operates at the high speed of 641 ps under the low-voltage condition of 0.7 V.