Electric field switching of ferromagnetism at room temperature

In a development that holds promise for future magnetic memory and logic devices, researchers with the U.S. Department of Energy (DOE)'s Lawrence Berkeley National Laboratory (Berkeley Lab) and Cornell University successfully used an electric field to reverse the magnetization direction in a multiferroic spintronic device at room temperature. This demonstration, which runs counter to conventional scientific wisdom, points a new way towards spintronics and smaller, faster and cheaper ways of storing and processing data.

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