Researchers introduce highest performing III-V metal-oxide semiconductor field-effect transistors
Thursday, June 12, 2014 - 05:32
in Physics & Chemistry
(Phys.org) —Researchers from the University of California, Santa Barbara (UCSB) have recently introduced the highest performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs) at the 2014 Symposium on VLSI Technology.