Laser thermal anneal to boost performance of 3-D memory devices
Wednesday, October 16, 2013 - 08:30
in Physics & Chemistry
Nanoelectronics research center imec and Excico, a global leader in semiconductor laser annealing, have successfully demonstrated the application of laser thermal anneal (LTA) to boost the current in vertical polysilicon channel devices for 3D memory. Due to the larger grain size of the laser recrystallized polycrystalline channel material, up to 10 times higher read current and 2.5 times steeper sub-threshold slope could be obtained as compared to conventional polysilicon channel. This technique provides a way to higher stacking and therefore higher bit density in 3D memory.