Model that predicts real-world behaviors of insulator interfaces makes designing 'nano-electronic' materials simpler
Wednesday, February 13, 2013 - 08:30
in Physics & Chemistry
(Phys.org)—Advances in miniaturization have made electronic devices cheaper and more powerful, but these procedures also create new challenges for materials scientists. For example, traditional silicon dioxide insulators used in field-effect transistors begin to leak small amounts of current at nanoscale dimensions. To combat this problem, researchers have developed insulators called 'high-k dielectrics' that link heavier elements, such as hafnium or zirconium, into insulating oxide films with exceptional charge-isolating capabilities.