Imec evaluates replacement metal gate options for further transistor scaling
Wednesday, June 13, 2012 - 06:00
in Physics & Chemistry
Imec is successfully testing and evaluating various options for further transistor scaling using high-k dielectrics and metal gates in a replacement metal gate (RMG) integration schema. Although RMG technology is inherently more complex than gate-first integration, it has a number of advantages that allow increasing the device performance and that widen the choices in terms of high-k and metal gate materials. Testifying to its progress with RMG, imec presented a number of noted papers at the 2012 VLSI Technology Symposium (June 12-15, 2012, Honolulu, USA).