Elpida Memory develops resistance RAM prototype
Tuesday, January 24, 2012 - 11:30
in Physics & Chemistry
Elpida Memory, the world's third largest Dynamic Random Access Memory ("DRAM") manufacturer, today announced the development of its first-ever high-speed non-volatile resistance memory (ReRAM) prototype. As the ReRAM prototype was made using a 50-nanometer process technology it has a memory cell array operation of 64 megabits, one of the highest densities possible for ReRAM. The prototype was jointly developed with the New Energy and Industrial Technology Development Organization (NEDO), a Japanese-funded public institution. Further work on ReRAM development is being conducted with Sharp Corporation, the National Institute of Advanced Industrial Science and Technology (AIST, another Japanese public institution) and the University of Tokyo.