Perspective article examines conductivity at the LaAlO3 and SrTiO3 (001) interface
Monday, October 10, 2011 - 08:31
in Physics & Chemistry
(PhysOrg.com) -- Complex oxides have the potential to inject new functionalities into technologies that require semiconductors. The correlated behavior of itinerant electrons in these materials sets complex oxides apart from traditional semiconductors such as Si and GaAs. Potential applications abound, but the fundamental properties of these materials, particularly when combined to make interfaces, must be understood. In an invited Perspective article in Surface Science, Dr. Scott Chambers of PNNL examines conductivity at the interface of polar and nonpolar complex oxides from outside the reigning paradigm and considers how unintentional dopants and defects, resulting from interfacial mixing, might affect the electronic properties.