Segregation behaviors and radial distribution of dopant atoms in silicon nanowires
Monday, February 28, 2011 - 09:02
in Physics & Chemistry
National Institute for Material Science, Japan Science and Technology Agency and University of Tsukuba announced on February 4, 2011 that they succeeded in detecting nondestructively dynamic behaviors of doped impurities in Si nanowires (Si NWs) coated by SiO2 to make surrounding gate field-effect transistors. Details were presented in NANO Letters of American Chemical Society.