High-Reliability Read-Method for Spin-Torque-Transfer MRAM, Next-Generation Non-Volatile Memory
Friday, February 12, 2010 - 14:35
in Biology & Nature
Fujitsu Laboratories and the University of Toronto today announced that they have jointly developed the world's first high-reliability read-method for use with spin-torque-transfer (STT) MRAM that is insusceptible to erroneous writes.