Toshiba Develops SRAM Circuit Technique that Secures Low Voltage Operation of System LSI
Monday, February 8, 2010 - 08:35
in Physics & Chemistry
Toshiba Corporation today announced that it has developed a breakthrough technology that achieves low voltage operation of System LSI, opening the way to reduced power consumption in digital products. The technology secures successful operation of static random access memories (SRAM) at low voltage with an improved circuit design that optimizes voltage control of the bit line and word line.