Argonne scientists pinpoint mechanism to increase magnetic response of ferromagnetic semiconductor
Wednesday, February 25, 2009 - 13:22
in Physics & Chemistry
When squeezed, electrons increase their ability to move around. In compounds such as semiconductors and electrical insulators, such squeezing can dramatically change the electrical- and magnetic- properties.
Read the whole article on Physorg
More from Physorg
Related
- Argonne scientists pinpoint mechanism to increase magnetic response of ferromagnetic semiconductorWed, 25 Feb 2009, 13:25:57 EST
- Neutron researchers discover widely sought property in magnetic semiconductorTue, 25 Nov 2008, 17:09:03 EST
- Creating unconventional metalsWed, 20 Aug 2008, 13:29:31 EDT
- Device controls electron spin at room temperatureMon, 6 Apr 2009, 10:29:12 EDT
- UC San Diego researchers enhance lithography light sourcesWed, 9 Jul 2008, 17:42:35 EDT