Toshiba to launch 43nm SLC NAND flash memory
Tuesday, October 28, 2008 - 16:07
in Mathematics & Economics
Toshiba today announced the launch of a new line-up of 43nm single-level cell (SLC) NAND flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions.