Portuguese team makes first paper based transistor
Tuesday, July 22, 2008 - 05:56
in Physics & Chemistry
(PhysOrg.com) -- Elvira Fortunato and colleagues from the Centro de Investigação de Materiais (Cenimat/I3N), at Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, made the first Field Effect Transistor (FET) with a paper "interstrate" layer.