IMEC reports major progress in EUV
Monday, July 14, 2008 - 15:35
in Physics & Chemistry
IMEC reports functional 0.186µm2 32nm SRAM cells made with FinFETs from which the contact layer was successfully printed using ASML`s full field extreme ultraviolet (EUV) Alpha Demo Tool (ADT). Applied Materials, using its most advanced deposition systems, was key to fabricating the ultra-small circuit structures. IMEC also completed the integration and site acceptance test of the EUV ADT in its 300mm clean room.