'Stress Tests' Probe Nanoscale Strains in Materials
Tuesday, November 25, 2008 - 20:28
in Physics & Chemistry
Researchers at NIST have demonstrated their ability to measure relatively low levels of stress or strain in regions of a semiconductor device as small as 10 nanometers across. Their recent results not only will impact the design of future generations of integrated circuits but also lay to rest a long-standing disagreement in results between two different methods for measuring stress in semiconductors.