Large Area Transistors Get Helping Hand From Quantum Effects

Researchers report that nano-designed transistors for the large area display and sensor application field benefit hugely from quantum size effects. The unexpected superior switching performance (low leakage current, and steep sub-threshold slope) shown experimentally and analysed theoretically, demonstrate hitherto unexplored routes for improvements for transistors based on disordered silicon films. By making the conduction channel in these disordered transistors very thin, the team has shown this technology will enable the design of low power memory for large area electronics based on a low-cost industry standard material processing route.

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