Field-effect transistors (FETs) based on single-walled carbon nanotubes (SWNTs) exhibit a range of optoelectronic effects including near-infrared electroluminescence.
South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.
... Nova de Lisboa, made the first Field Effect Transistor (FET) with a paper «interstrate» layer.
There ... device rivals oxide-based thin film transistors (TFTs) produced on glass or crystalline silicon ...
... Various applications for ZnO nanowires have been conceived, including the next generation of field effect transistors, light emitting diodes, sensors and resonators. ZnO nanowires are also envisioned ...
... .com) -- IBM Researchers today announced that they demonstrated the operation of graphene field-effect transistors at GHz frequencies, and achieved the highest frequencies reported so far using this ...
... occurs in non-suspended carbon nanotube transistors.
A wave called a surface polariton is caused ... polar substrate and do not contribute to the field-effect transistor temperature rise," the group wrote ...
... sizes.
"Our key finding was that devices made with nanowires, such as nanowire field-effect transistors, require imaginative design of the materials, the surrounding dielectric, and the operating ...
... discovered that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs). This opens the door to extremely sensitive chemical ...
... discovered that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs). This opens the door to extremely sensitive chemical ...
... , but from a material called indium-gallium-arsenide. Called finFETs, for fin field-effect-transistors, researchers from around the world have been working to perfect the devices as potential ...
... silicon metal/oxide semiconductor field-effect transistor (silicon MOSFET). To convert the electric ... silicon. However, no useful GaN MOS transistor has been developed. Huang’s innovation, the first GaN ...
... the J. G. Jackson and C. J. Wood Professor of Chemistry, has made transistors called " ... than nanoribbons made through other techniques.
Field-effect transistors are the key elements of computer chips, ...
... kinds of electronic devices that are constructed using thin film layered structures, such as field-effect transistors.
"The detection of high frequency acoustic waves also has been proposed for use ...
... For the electronics, nanowires with a germanium core and a silicon shell were the basis of field-effect transistors that would amplify the current produced by the photosensors in response to light by ...
... with an asterisk. Tests showed that actual devices, field effect transistors, made with the blend only worked well in a so-called “top-gated” structure. The critical active part of the ...
