Toshiba's low leakage SRAM enables fast wake-up from a deep sleep mode
Wednesday, February 12, 2014 - 08:30
in Physics & Chemistry
Toshiba Corporation today announced that it has developed an eXtremely Low Leakage 65nm SRAM (XLL SRAM) suitable for back-up RAM in low power MCU that achieves a fast wake-up time from a deep sleep mode.