Researchers Set Speed Records for Zinc-Based Transistors with Argon Plasma Process

Researchers at Korea University and the Samsung Advanced Institute of Technology have now developed a new type of thin film transistor that's significantly faster than its predecessors -- an important step toward speeding up image display on devices like TVs and smartphone screens. The scientists made the transistor from zinc oxynitride, or ZnON, which they then plasma treated with argon gas. They present their work this week in Applied Physics Letters.

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