A New Multi-Bit 'Spin' for MRAM Storage
Tuesday, July 22, 2014 - 11:00
in Physics & Chemistry
Interest in magnetic random access memory (MRAM) is escalating, thanks to demand for fast, low-cost, nonvolatile, low-consumption, secure memory devices. MRAM boasts all of these advantages as an emerging technology, but so far it hasn't been able to match flash memory in terms of storage density. In Applied Physics Letters, a France-U.S. research team reports an intriguing new multi-bit MRAM storage paradigm with the potential to rival flash memory.