Spin-galvanic effect in graphene with topological topping demonstrated
Wednesday, September 2, 2020 - 09:41
in Physics & Chemistry
Researchers at Chalmers University of Technology, Sweden, have demonstrated the spin-galvanic effect, which allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene with a topological insulator, the authors realize a gate-tunable spin-galvanic effect at room temperature. The findings were published in the scientific journal Nature Communications.