Room-temperature bonded interface improves cooling of gallium nitride devices
Thursday, March 12, 2020 - 10:00
in Physics & Chemistry
A room-temperature bonding technique for integrating wide bandgap materials such as gallium nitride (GaN) with thermally-conducting materials such as diamond could boost the cooling effect on GaN devices and facilitate better performance through higher power levels, longer device lifetime, improved reliability and reduced manufacturing costs. The technique could have applications for wireless transmitters, radars, satellite equipment and other high-power and high-frequency electronic devices.