Delivering pressure with an unconventional crystal interface

Monday, October 29, 2018 - 09:40 in Physics & Chemistry

The use of pressure to alter semiconductor properties is showing increasing promise in applications such as high-performance infrared sensors and energy conversion devices. With a novel and unconventional crystal interface, researchers at Rensselaer Polytechnic Institute have enabled more powerful and dynamic tuning of the method, which they initially pioneered in 2015.

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