BiSb expands the potential of topological insulators for ultra-low-power electronic devices

A research team led by Pham Nam Hai at the Department of Electrical and Electronic Engineering, Tokyo Institute of Technology (Tokyo Tech) has developed the world's best-performing pure spin current source made of bismuth-antimony (BiSb) alloys, which they report as the best candidate for the first industrial application of topological insulators. The achievement represents a big step forward in the development of spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices with the potential to replace existing memory technologies.

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