New technique integrates graphene, graphene oxide and reduced graphene oxide onto silicon chips at room temperature
Tuesday, September 13, 2016 - 12:11
in Physics & Chemistry
Materials researchers at North Carolina State University have developed a technique that allows them to integrate graphene, graphene oxide (GO) and reduced graphene oxide (rGO) onto silicon substrates at room temperature by using nanosecond pulsed laser annealing. The advance raises the possibility of creating new electronic devices, and the researchers are already planning to use the technique to create smart biomedical sensors.