GaN diodes with high current operations and a low turn-on voltage

Panasonic Corporation today announced that it developed gallium nitride (GaN) diodes that can not only operate at a high current that is four times greater than that tolerated by conventional silicon carbide (SiC) diodes, but also operate at low voltages by virtue of their low turn-on voltage. Production of the new diodes was made possible via a newly developed hybrid structure composed of of separately embedded structure comprised of a low-voltage unit and a high-current-capable unit, in preparation for high voltage conditions.

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