Researchers decode interface switching effects in ferroelectric memories
Thursday, June 11, 2015 - 06:00
in Physics & Chemistry
The nanoscale device community has shown great interest in exploiting the unique properties of ferroelectric materials for encoding information. But the circuitry for reading information stored in the polarization of these materials has prohibited its adaptation to extremely small scales. Now, researchers at Berkeley Lab and the Soleil Synchrotron in Paris have developed a new technique that provides key information for an alternative decoding method, where better understanding will help to fully harness the properties of these devices.