Researchers demonstrate electrical advantages of direct CU etch scheme for advanced interconnects
Wednesday, May 20, 2015 - 07:00
in Physics & Chemistry
Today, at the IEEE IITC conference, nano-electronics research center imec and Tokyo Electron Limited (TEL) presented a direct Cu etch scheme for patterning Cu interconnects. The new scheme has great potential to overcome resistivity and reliability issues that occur while scaling conventional Cu damascene interconnects for advanced nodes.