NXP's next generation power transistors deliver 5% increase in efficiency
Wednesday, June 4, 2014 - 05:30
in Physics & Chemistry
NXP Semiconductors today announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up to 5% more efficiency in Doherty applications. The first Gen9 transistors are designed for Doherty power amplifiers – symmetric and asymmetric – and offer benchmark power densities in existing high-volume packages. The Gen9 technology is also optimized for operation at 3.4-3.8 GHz in anticipation of these frequency bands being released on a global scale next year for use by mobile telecoms providers. NXP will showcase its first Gen9 products at IMS 2014.