Nanowire bridging transistors open way to next-generation electronics

A new approach to integrated circuits, combining atoms of semiconductor materials into nanowires and structures on top of silicon surfaces, shows promise for a new generation of fast, robust electronic and photonic devices. Engineers at the University of California, Davis, have recently demonstrated three-dimensional nanowire transistors using this approach that open exciting opportunities for integrating other semiconductors, such as gallium nitride, on silicon substrates.

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