Supercomputer used to simulate 3,000-atom nano device
Tuesday, January 14, 2014 - 10:00
in Physics & Chemistry
Fujitsu Laboratories announces that it has successfully simulated the electrical properties of a 3,000-atom nano device – a threefold increase over previous efforts – using a supercomputer. At the nanoscale level, even minor differences in the local atomic configuration can have a major impact on the electrical properties of a device, requiring the first- principles method of calculation to be used to accurately compute physical properties at the atomic level. However, when applying this method to electrical property forecasting, the massive computations involved limit these forecasts to the order of 1,000 atoms.